发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition which gives a photoresist forming a rectangular pattern in the production of a semiconductor device and ensures low edge roughness of a line pattern and a small dimensional shift in the transfer of a pattern to a lower layer in an oxygen plasma etching step. SOLUTION: The positive type photoresist composition contains an acid decomposable polysiloxane having a specified structural unit. |
申请公布号 |
JP2002062654(A) |
申请公布日期 |
2002.02.28 |
申请号 |
JP20000246734 |
申请日期 |
2000.08.16 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
MIZUTANI KAZUYOSHI;UNO SEIJI |
分类号 |
G03F7/039;C08G77/22;C08K5/00;C08L83/08;G03F7/004;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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