发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition which gives a photoresist forming a rectangular pattern in the production of a semiconductor device and ensures low edge roughness of a line pattern and a small dimensional shift in the transfer of a pattern to a lower layer in an oxygen plasma etching step. SOLUTION: The positive type photoresist composition contains an acid decomposable polysiloxane having a specified structural unit.
申请公布号 JP2002062654(A) 申请公布日期 2002.02.28
申请号 JP20000246734 申请日期 2000.08.16
申请人 FUJI PHOTO FILM CO LTD 发明人 MIZUTANI KAZUYOSHI;UNO SEIJI
分类号 G03F7/039;C08G77/22;C08K5/00;C08L83/08;G03F7/004;G03F7/075;H01L21/027 主分类号 G03F7/039
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