发明名称 PROJECTION EXPOSURE DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To eliminate variation in a patterned image due to the thermal deformation of a reticle and to make the image formation of the high-accuracy patterned image possible by a method, wherein a projection exposing device is formed into a constitution/wherein in formation for correcting a variation of the image-formation characteristics of the patterned image, which is generated due to the thermal deformation of a mask, is sought on the basis of information on the characteristics of the mask. SOLUTION: Lens elements of a projection optical system PL are driven, whereby a projection exposure device is formed into a constitution/wherein the coupling characteristics, such as projection magnification and distortion of the device are corrected. Moreover, for making the optical characteristics of the system PL adjustable, one part of the optical elements of a system P1 is made movable. A first group of the lens elements 30 and 31 closest to a reticle R are fixed by a support member 32, and at the same time a second group of the lens elements 33 are fixed by a support member 34 and a third group of the lend elements 35 are fixed by a support member 36. Moreover, the lens elements under the lower parts of the elements 35 are respectively fixed on a lens tube 37 of the system PL.
申请公布号 JPH11102860(A) 申请公布日期 1999.04.13
申请号 JP19980208882 申请日期 1998.07.24
申请人 NIKON CORP 发明人 TANIGUCHI TETSUO;NEI MASAHIRO
分类号 G03F7/20;G03F9/00;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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