MEMORY CELL PROVIDED WITH PROGRAM/MARGIN VERIFICATION

摘要

PROBLEM TO BE SOLVED: To provide a programmable non-volatile memory cell provided with programming voltage margin verification. SOLUTION: A memory cell comprises a voltage comparator 12 having a differential input having a first input 14 and a second input 16, and a bias circuit 26 generating differential input voltage. Voltage offset 18 is applied to a second input of the comparator to supply input offset voltage. Programming voltage (HYDRAIN) for programming a memory cell is received by a programming input, and the memory cell supplies an output signal Q. A current made to flow in an output and a programming input is monitored to verify voltage margin in a state in which the memory cell is not programmed or in a appropriately programmed state.