发明名称 SEMICONDUCTOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor circuit to generate a multi-level pulse like a ternary pulse while using transistors of low breakdown strength. SOLUTION: This semiconductor circuit has a first circuit (part of a coupling capacitor 41, a diode 42 and MOS transistors 43-46) for outputting a first pulse, a second circuit (part of MOS transistors 37-40) for outputting a second pulse of a polarity opposite to that of the first pulse, an output line (line of anode D) for outputting any one of outputs of the first and second circuits, a first switch 47 connected between the output part of the first circuit and the output line, and a second switch 48 connected between the output part of the second circuit and the output line. Thus, pulses of different polarities can be generated while turning a voltage between the source and drain of the MOS transistor to a low value as VDD or VSS.
申请公布号 JPH11205686(A) 申请公布日期 1999.07.30
申请号 JP19980284483 申请日期 1998.10.06
申请人 HITACHI LTD 发明人 OZAKI TOSHIBUMI;NAKAI MASAAKI;TANAKA HARUHIKO;ONO HIDEYUKI;SATO AKIRA
分类号 H01L27/148;H01L21/339;H01L29/762;H04N5/335;H04N5/341;H04N5/369;H04N5/3722;H04N5/3725;H04N5/3728;H04N5/374;(IPC1-7):H04N5/335 主分类号 H01L27/148
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