| 摘要 |
PROBLEM TO BE SOLVED: To predict the distribution of an OSF ring in a single crystal accurately. SOLUTION: At first to seventh steps, temperature distribution in a single crystal 14 growing from melt 12 is determined using a computer from the pulling time of the single crystal to the finish time of cooling while taking account of the convection of the melt. At eighth to fifteenth steps, void density is determined using the computer by taking account of the cooling process of the single crystal separated from the melt and the pulling rate of the single crystal after it is separated from the melt and reflecting the effect of gradual and quick cooling of the single crystal on the result, and then the void radius and the thickness of an inner wall oxide film growing around these voids are determined in relation to each other using the computer. Furthermore, at a sixteenth step, the width and position of the OSF ring are determined using the computer based on the density distribution and the radius of the void and the thickness of the inner wall oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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