NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A nonvolatile memory device and a fabricating method thereof are provided to increase a coupling ratio by forming a floating gate electrode having a width which is gradually decreased downward. Top gate structures(120) are formed on an active region defined in a substrate(100) and are spaced apart from each other. Each top gate structure has a blocking layer pattern(118) and a control gate electrode(114). Bottom gate structures are interposed between the upper gate structures and the substrate. Each bottom gate structure includes a tunnel insulating layer and a floating gate electrode(122) whose width is narrower than the top gate structures. An air gap(130) is interposed between gate structures composed of the bottom and top gate structures, and gaps between the gate structures are buried by an insulation layer(132).