| 摘要 |
PROBLEM TO BE SOLVED: To provide a processing method capable of removing an oxide formed on a metal surface with good reproducibility, and a processing apparatus used therefor. SOLUTION: In exposure in an oxidation atmosphere, an oxide film 10 is formed on a copper film 4 on the bottom surface of a via hole 9 formed on a Low-k film 7 and an etching stopper film 6. The oxide film 10 is removed by allowing an organic material expressed by a general formula (CH<SB>2</SB>O)<SB>n</SB>(n is an integer other than 1) to contact a processing target having a gaseous metallic portion on which the oxide film is formed on the surface. COPYRIGHT: (C)2008,JPO&INPIT
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