| 摘要 |
PURPOSE: MRAM module configuration is provided, in which the highest possible packing density of memory cell zones is achieved with utilization of free corner areas. CONSTITUTION: A MRAM memory cell disposed between a word line WL and a bit line BL, which bit line BL crosses the word line WL essentially perpendicularly and at a distance. At a crossover point between the word line WL and the bit line BL, there is a multilayer system containing a fixed or hard magnetic layer HML and a free or soft magnetic layer WML and also a tunneling barrier layer TL situated between the layers HML and WML. The hard magnetic layer HML, the tunneling barrier layer TL and the soft magnetic layer WML form a magnetic tunnel junction (MTJ) cell.
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