| 摘要 |
PURPOSE:To obtain an excellent reproduced picture by forming a picture element electrode with a semiconductor film of a same conduction type as that of a storage diode and forming a picture element separation region of an opposite conduction type to that of the storage diode to part of the picture element electrode. CONSTITUTION:An n-channel poly-crystal Si film 18 being a picture element electrode is formed in a contact hole and on an insulation film 17, the surface is made flat and a p<+> inverting layer (picture element separation area) 19 is formed to a region of the poly-crystal Si film 18 subjected to picture element separation. Thus, it is not required to eliminate part of the picture element electrode 18 due to etching of the picture element separation or the like and no step difference is caused to the end of the picture element electrode 18. Occurrence of a picture defect due to electric field concentration at the picture element electrode end or deterioration in the remaining characteristic due to a defect density is in advance prevented. Thus, an excellent reproduced picture is obtained. |
