MANUFACTURING METHOD OF METAL COATED PART AND CONTACT STRUCTURE IN INTEGRATED CIRCUIT HAVING ETCH STOP LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for effectively manufacturing a semiconductor interconnection of an integrated circuit having an etch stop layer. SOLUTION: A trench dielectric layer 4 of a composite structure having a semiconductor substrate, a gate structure, a dielectric spacer adjacent to it, a contact dielectric layer 1 on the layers, an etch stop layer 14 on the contact dielectric layer 1, and a trench dielectric layer 4 on the etch stop layer 14 is etched under the etching conditions not to practically etch the etch stop layer 14, and a trench is formed. An opening is formed in the etch stop layer 14 and the contact dielectric layer 1 by etching, and a conductive material 11 is attached in the opening and the trench.