| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor oxidation apparatus which can control properly the amount of oxidations by maintaining the amount of the oxidations of a selective oxidation layer uniformly in a surface and to provide a method of manufacturing a semiconductor element. SOLUTION: A method of manufacturing the semiconductor element in which a semiconductor test piece comprising a mesa having a semiconductor layer including Al and As is arranged in an atmosphere of steam, a current narrowed part and a current implantation part surrounded by this are formed from the peripheral end of the semiconductor layer of the mesa toward the radial inside and by leaving the center section of the semiconductor layer and oxidizing and forming a current implantation part surrounded by this includes a step of interrupting the oxidation treatment during the oxidation treatment of the semiconductor layer, a step of approaching an observation means besides the mesa in the vessel and countering through the observation part prepared in the vessel in which the semiconductor device is held, a step of asking for the degree of the oxidation advance from the capacity of the current implantation part surrounded by the capacity of the current narrow segment or the current narrow segment observed with the observation means, a step of calculating the amount of the additional oxidations from the capacity of the current implantation part surrounded by the capacity of the current narrow segment or the current narrow segment observed with the observation means, a step of calculating the amount of the additional oxidations from the degree of the oxidation advance, and a step of additionally oxidizing the semiconductor layer with only the amount of the additional oxidations. COPYRIGHT: (C)2006,JPO&NCIPI
|
