| 发明名称 |
Method and structure for deep well structures for long wavelength active regions |
| 摘要 |
Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
|
| 申请公布号 |
US7358523(B2) |
申请公布日期 |
2008.04.15 |
| 申请号 |
US20040970528 |
申请日期 |
2004.10.20 |
| 申请人 |
AVAGO TECHNOLOGIES FIBER IP PTE LTD |
发明人 |
TAN MICHAEL R. T.;TANDON ASHISH;BOUR DAVID P. |
| 分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
