| 摘要 |
PROBLEM TO BE SOLVED: To attain good element characteristics by improving the function susceptible conventionally to deterioration of crystallinity or generation of crack when a nitride semiconductor layer containing Al exists in an element structure employing a nitride semiconductor. SOLUTION: On a nitride semiconductor substrate 10 of AlN, element structures 103-111 having a nitride semiconductor layer containing Al are formed to produce a laser element. Since a nitride semiconductor layer containing Al having a coefficient of thermal expansion smaller than that of the substrate exists in the element structure on the nitride semiconductor substrate, the nitride semiconductor layer containing Al can be formed with good crystallinity. |
