| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which ensures a small change in resist pattern dimensions under variation of exposure energy and is excellent in mask reproducibility, and to provide a resist pattern forming method. <P>SOLUTION: The resist composition comprises: a base material component (A) of which solubility in an alkali developer changes by the action of an acid and an acid; generator component (B) which generates an acid upon exposure to light, wherein the acid generator component (B) comprises an acid generator (B1) having a cationic moiety represented by general formula (b'-1) [wherein two of R<SP>1"</SP>-R<SP>3"</SP>are each independently an alkyl group or an aryl group, the two may bond to each other to form a ring with the sulfur atom in the formula; and the balance is an alkyl group, an aryl group or -(R<SP>4'</SP>)-C(=O)-R<SP>5'</SP>, wherein R<SP>4'</SP>is a 1-5C alkylene group and R<SP>5'</SP>is an aryl group] and an acid generator (B2) having a cationic moiety containing a dibenzothiophene skeleton. <P>COPYRIGHT: (C)2009,JPO&INPIT |
