| 摘要 |
PURPOSE:To restrain the electric current of an element from being spread and to reduce a reactive current by a method wherein a ridge-shaped stepped part is formed on a substrate and the shape of a light-emitting active layer which is epitaxially grown on it by a metal organic vapor growth method is utilized. CONSTITUTION:An SiO2 film is vapor-deposited on an n-GaAs substrate 1; a stripe-shaped SiO2 mask having a width of 1 to 4 mum is formed by a photolith ographic technique; the n-GaAs substrate 1 is etched; the angle at which the inclined face of a ridge-shaped stepped part is formed to a flat face is set at 10 to 15 deg. or higher. Then, the SiO2 mask is etched and removed; double heterolayers of a GaAs buffer layer 2, an n-(AlxGa1-x)0.51In0.49P layer 3, an undoped Ga0.51In0.49P active layer 4, a p-(AlxGa1-x)0.51In0.49P clad layer 5, a p-Ga0.51In0.49P layer 6 and an n-GaAS current construction layer 7 are grown sequentially. Then, an SiO2 film is vapor-deposited; a mask whose central-part stripe has been removed is manufactured by a photolithographic technique; the n-GaAs current constriction layer 7 is etched; a channel width is set at 5.5 to 6.5 mum. |
