发明名称 Method for stacked three dimensional device manufacture
摘要 Stacked three-dimensional devices can be prepared by stacking wafers as an alternative to stacking individual devices. Chip regions are formed on several wafers with each chip region being surrounded by a separation region, such as an insulator filled trench. The wafers are then stacked with the chip regions in alignment. Aligning the wafers can be facilitated using notched regions in the periphery of the wafers. The wafers are then joined together by lamination. After laminating the stacks of wafers, stacks of chips are separated by etching, dicing or other processes, which separate out stacked chip devices from the stacked wafer at the chip separation regions. The process allows several stacked chip devices to be manufactured simultaneously.
申请公布号 US5872025(A) 申请公布日期 1999.02.16
申请号 US19970815452 申请日期 1997.03.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CRONIN, JOHN E.;PALAGONIA, ANTHONY;PIERSON, BERNADETTE A.;SCHMIDT, DENNIS A.
分类号 H01L21/304;H01L21/301;H01L21/78;H01L21/98;H01L25/065;(IPC1-7):H01L21/283;H01L21/18;H01L21/027;H01L21/31 主分类号 H01L21/304
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