Bipolar transistor with high negative resistance and improved high frequency characteristics at increased room temperatures

摘要

The transistor (100) has an emitter region (10) next to a base region (20), which is next to a collector region (50) with a first, highly doped collector layer (30). Electrons from the collector region migrate to the base region due to the tunnel effect. The transistor has a negative resistance at room temperature. The first collector layer (30) is formed near the base region and has a band gap larger than that of the base region. The base region has a layer of GaAs and the first collector layer is InGaP. An Independent claim is included for a semiconductor component with the bipolar transistor.