| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has flexibility and resistance to a physical change such as bending, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device comprises: a plurality of transistors provided on a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film in between, and an interlayer insulating film provided to cover the gate electrode; and a bending portion provided between the plurality of transistors. The bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus than that of the interlayer insulating film. In addition, a material having a lower glass transition point or higher plasticity than that of the interlayer insulating film can alternatively be provided as a material with which the opening is filled. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
| 申请公布号 |
JP2006270077(A) |
申请公布日期 |
2006.10.05 |
| 申请号 |
JP20060045181 |
申请日期 |
2006.02.22 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
KOYAMA JUN;ORIKI KOJI;OKAZAKI SUSUMU;MORIYA YOSHITAKA;YAMAZAKI SHUNPEI |
| 分类号 |
H01L27/12;H01L21/02;H01L21/336;H01L21/76;H01L21/764;H01L21/8234;H01L21/8238;H01L25/04;H01L25/18;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L29/786;H01L51/50;H05B33/02;H05B33/14 |
主分类号 |
H01L27/12 |
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