| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface acoustic wave device in which an SiO<SB>2</SB>film is formed on an IDT so that not only frequency/temperature characteristics are enhanced but also a crack is hardly generated on the surface of the SiO<SB>2</SB>film, desired characteristics can be surely obtained and a coefficient of electromechanical coupling and a coefficient of reflection are great. SOLUTION: In a surface acoustic wave device 11, at least one IDT 13a, 13b constructed of a metal or an alloy of which the density is higher than that of Al is formed on an LiTaO<SB>3</SB>substrate 12 of 25-55°rotation Y-cut/X-propagation, and an SiO<SB>2</SB>film 15 for enhancing frequency/temperature characteristics is formed on the LiTaO<SB>3</SB>substrate 12 so as to cover the IDT 13a, 13b. COPYRIGHT: (C)2007,JPO&INPIT
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