发明名称 HIGH VOLTAGE CONTROL CIRCUIT OF SEMICONDECTOR MEMORY DEVICE
摘要 PURPOSE: A high voltage control circuit of a semiconductor device is provided to efficiently generate a pumping voltage by pumping high voltage using an external voltage with a higher level than a voltage generally used in a semiconductor device. CONSTITUTION: A pumping circuit(50) pumps a high voltage using a second external power voltage. A second external power voltage is higher than a first external power voltage generally used in a semiconductor device. A detection part(30) detects the level of the second external power voltage. A pumping circuit controls a pumping operation when the second external power voltage reaches to a specified level. A high voltage detection part uses the first external power voltage as a power supply voltage.
申请公布号 KR20100013873(A) 申请公布日期 2010.02.10
申请号 KR20080075599 申请日期 2008.08.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KU, KIE BONG
分类号 G11C5/14;G11C7/10 主分类号 G11C5/14
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