| 摘要 |
Provided are a reflective mask blank and a reflective mask which are capable of improving the contrast for inspection light having a wavelength of 200 nm or less in an inspection, capable of improving the contrast for exposure light in use of the mask, and capable of forming a high-resolution fine pattern. A reflective mask blank 10 includes a substrate 1, and a multilayer reflective film 2 adapted to reflect exposure light, a protective film 6 composed mainly of ruthenium (Ru) or its compound on the multilayer reflective film 2, and an absorber film 4 adapted to absorb the exposure light, which are formed in this order on the substrate. The absorber film 4 has a laminated structure including an uppermost layer 4b and a lower layer 4a. The uppermost layer 4b is formed of a material composed mainly of a nitride, an oxide, an oxynitride, a carbide, a carbonitride, or an oxycarbonitride of at least one or more elements selected from Si and Cr. A reflective mask 20 is obtained by forming a transfer pattern in the absorber film of the reflective mask blank. |
