发明名称 Back reflector layer, method for forming it, and photovoltaic element using it
摘要 <p>An object of the present invention is to provide a back reflector layer in a texture structure with a high reflectivity by preventing oxidation of a ground metal or alloy, and a method for forming it. A further object is to provide a photovoltaic element excellent in characteristics such as a conversion efficiency, and a process for fabricating it. The back reflector layer has a metal or alloy (hereinafter referred to as a first metal), and a transparent oxide of a second metal, formed on the first metal. A photovoltaic element is formed by forming a semiconductor junction on the back reflector layer. In the back reflector layer and the photovoltaic element, an electron affinity of the second metal is 0.46 or more eV smaller than that of the first metal, and the transparent oxide is formed by a sputtering method in an atmosphere comprising at least H2O and an inert gas and with a target having a composition ratio of the second metal being 1.06 to 1.2 times a stoichiometric composition thereof. <MATH></p>
申请公布号 EP0698929(A2) 申请公布日期 1996.02.28
申请号 EP19950113240 申请日期 1995.08.23
申请人 CANON KABUSHIKI KAISHA 发明人 NAKAYAMA, AKIYA
分类号 H01L31/04;H01L31/0236;H01L31/0392;H01L31/052;H01L31/18;H01L31/20;(IPC1-7):H01L31/052;H01L31/075 主分类号 H01L31/04
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