POWER SEMICONDUCTOR DEVICES

摘要

A power semiconductor device comprises a multiple-cellular insulated-gate field-effect transistor structure with each cell (100) present at a corresponding opening (110) in a mesh-shaped gate electrode (11). The cells (100) and the openings (110) are of elongate shape having longitudinal sides (X) at which the channel areas (1) are present under a gate insulating layer (12) under longitudinal parts (11x) of the gate electrode (11). The channel areas (1) are absent at ends (Z) of the elongate cells (100). Preferably, the longitudinal parts (11x) of the gate electrode (11) are interconnected beyond the ends (Z) of the elongate cells (100) by interconnection parts (11z) of the gate electrode (11) which are located on a thicker insulating layer (13) than the gate insulating layer (12). This thicker insulating layer (13) is present at least between facing ends (Z) of neigbouring elongate cells (100) where the channel areas (11) are absent.