| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon thin-film optoelectric conversion device for improving optoelectric conversion characteristics without reducing them, even if all semiconductor layers are formed in the same plasma CVD chamber and for achieving improved productivity at low cost. SOLUTION: In a method for manufacturing a silicon thin-film optoelectric conversion device by utilizing a plasma CVD method, an n-type layer 104 is formed to a thickness within the range of 2-50 nm, an i-type crystal silicon optoelectric conversion layer 105 is deposited at a deposition rate within 0.036-0.36μm/hr for the time interval within the range of 5-20 minutes and then is ultimately deposited up to a thickness within the range of 1-5μm, and further a p-type layer 106 is formed into a thickness within the range of 2-50 nm, and the n-type layer, the i-type optoelectric conversion layer, and the p-type layer are successively formed in the same plasma CVD reaction chamber.</p> |
