| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit a degradation of an electrical property of a semiconductor chip when a supporting electrode is press fitted in a fitting hole of a radiator, without causing radiation properties of the support electrode to deteriorate. <P>SOLUTION: The bottom wall 11 forming a support electrode 1 of diode device 10 is provided with a flat side 11a at a rear side of a recess 14. The flat side 11a has an annular trench 5 with a definite diameter from the perimeter side 1a of the support electrode 1 to an inside of a diameter direction. When the support electrode 1 is press fitted in a fitting hole 22, a compressive force P is transmitted from a sidewall 12 to the bottom wall 11. However, since the trench 5 is shrunk and the compressive force P transmitted to the center side of the bottom wall 11 is reduced, stress is eased in a semiconductor chip 2 arranged in the recess 14 of the supporting electrode 1. The support electrode 1, in which only the trench 5 is provided in the flat side 11a, has a large heat capacity, satisfactorily absorbs the heat of the semiconductor chip 2, and releases the heat to the outside. <P>COPYRIGHT: (C)2007,JPO&INPIT |
