| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that is enhanced in yield.SOLUTION: A plasma processing apparatus contains a processing chamber which is disposed in a vacuum container and can be reduced in pressure, and a sample table disposed in the processing chamber, a substrate as a processing target being mounted on the upper surface of the sample table. The plasma processing apparatus processes the substrate by using plasma formed in the pressure-reduced processing chamber. The sample table has: an upper member for electrostatically adsorbing and holding the substrate mounted on the upper surface thereof; a lower member which is disposed below the upper member with a gap between the lower member and the upper member, and in which a flow passage for making refrigerant flow is disposed; an electrode which is disposed between the upper member and the lower member and forms electrostatic force for adsorbing the upper and lower members; and a gas introduction passage for introducing gas for heat transfer into the gap between the adsorbed upper and lower members.SELECTED DRAWING: Figure 1 |
