发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent mixture of different brazing materials by providing a region for repelling the brazing materials on a metallized layer between a transistor chip and a capacitor chip. CONSTITUTION:Insulating layers 5 are formed on both ends of a beryllia board 1, metallized layers 6 for terminals are formed on the layers 5, and a metal layer 2 for repelling a brazing material is provided on a region except both the ends. Element placing metallized layers 3, 4 are formed on predetermined regions on the layer 2. The layers 3, 4 are disposed between a transistor chip TR and a capacitor chip C. Even if the materials are fed on the layers 3a-3d at the time of placing the chips TR, C, the materials are repelled by the layer 2 on a groove region 10. Thus, the materials are not introduced over the region 10 to the adjacent layers 3a-3d, and not mixed therewith.
申请公布号 JPH0411762(A) 申请公布日期 1992.01.16
申请号 JP19900114411 申请日期 1990.04.28
申请人 NEC CORP 发明人 KAMAHORI HIDEO
分类号 H01L23/12;H01L21/52;H01L25/04;H01L25/18;H01P5/08 主分类号 H01L23/12
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