| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor element like a thin film transistor wherein a silicon film in an actually amorphous state is annealed and crystallized at a temperature lower than the crystallization temperature of ordinary amorphous silicon. CONSTITUTION:On or under an amorphous silicon 1 film, a coating film, particles, clusters, etc., having island type, line type, stripe type, dot type, and film type nickel, iron, cobalt, ruthenium, rhodium, palladium, osmium, iridium, platinum, scandium, titanium, vanadium, chromium, manganese, copper, zinc, silver, or silicide of them, etc., are selectively formed. By performing annealing at a temperature lower than the crystallization temperature of ordinary amorphous silicon 1, cyrstallization is progressed from the silicon 1 as the starting point, and a crystal silicon film 3 is obtained. A semiconductor element like a thin film transistor is formed by using the crystal silicon film 3. |
