| 摘要 |
<p>The invention relates to a method of producing a relief structure on a substrate (support) made of semiconductor material, consisting in subjecting a wafer (1) of this semiconductor material, having a plane face (2), to the following three steps: - a first step of implantation, by bombarding the plane face (2) of the wafer (1) by means of ions (3), creating areas of gas microbubbles (4, 7) within the volume of the wafer, each area being located, with respect to the plane face, at a depth depending on the ion-implantation energy received by this area so that all the implanted areas define a profile within the volume of the wafer, this profile delimiting, on the side containing the plane face, an upper region of the wafer constituting a thin film and, on the side opposite the plane face, a lower region constituting the bulk of the substrate; - a second step in which a stiffener, consisting of at least one layer of rigid material, is securely attached to the plane face of the said wafer; - a third step in which the assembly formed by the wafer and the stiffener is heat treated at a temperature sufficient to create a separation (12) between the thin film and the bulk of the substrate along the profile, the separation giving rise to a relief structure on the thin film and a reverse relief structure on the substrate. <IMAGE></p> |
