发明名称 Semiconductor Storage Device
摘要 The objective of the present invention is to provide a DRAM that reduces the current consumed by an address comparison circuit that compares an address signal with a defective address signal that has been programmed. Redundant predecoders predecode a defective row address signal DRA output by program circuits, and an address comparison circuit compares a predecoded signal, output by a predecoder, with the defective predecoded signals PDRA, output by the redundant predecoders. In the case of a 2-bit predecoding system, the address comparison circuit compares the predecoded signal PRA with the defective predecoded signal PDRA using four bits in order to compare the row address signal RA with the defective row address signal DRA using groups of two bits.
申请公布号 US2007097761(A1) 申请公布日期 2007.05.03
申请号 US20060553617 申请日期 2006.10.27
申请人 SUNAGA TOSHIO 发明人 SUNAGA TOSHIO
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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