发明名称 |
Light emitting device and method of manufacturing thereof |
摘要 |
The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
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申请公布号 |
US7306978(B2) |
申请公布日期 |
2007.12.11 |
申请号 |
US20040941837 |
申请日期 |
2004.09.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SAKAKURA MASAYUKI;NAGAI MASAHARU;MATSUDA YUTAKA;SAITO KEIKO;IKEDA HISAO |
分类号 |
H01L21/00;H05B33/10;G09F9/30;H01L21/82;H01L27/15;H01L27/32;H01L29/22;H01L29/227;H01L51/50;H01L51/52;H01L51/56;H05B33/00;H05B33/12;H05B33/14;H05B33/22;H05B33/28 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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