发明名称 Light emitting device and method of manufacturing thereof
摘要 The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
申请公布号 US7306978(B2) 申请公布日期 2007.12.11
申请号 US20040941837 申请日期 2004.09.16
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SAKAKURA MASAYUKI;NAGAI MASAHARU;MATSUDA YUTAKA;SAITO KEIKO;IKEDA HISAO
分类号 H01L21/00;H05B33/10;G09F9/30;H01L21/82;H01L27/15;H01L27/32;H01L29/22;H01L29/227;H01L51/50;H01L51/52;H01L51/56;H05B33/00;H05B33/12;H05B33/14;H05B33/22;H05B33/28 主分类号 H01L21/00
代理机构 代理人
主权项
地址