发明名称 |
Semiconductor Devices Including Transistors Having Three Dimensional Channels |
摘要 |
Semiconductor devices including a gate electrode crossing over a semiconductor fin on a semiconductor substrate are provided. A gate insulating layer is provided between the gate electrode and the semiconductor fin. A channel region having a three-dimensional structure defined at the semiconductor fin under the gate electrode is also provided. Doped region is provided in the semiconductor fin at either side of the gate electrode and an interlayer insulating layer is provided on a surface of the semiconductor substrate. A connector region is coupled to the doped region and provided in an opening, which penetrates the interlayer insulating layer. A recess region is provided in the doped region and is coupled to the connector region. The connector region contacts an inner surface of the recess region. Related methods of fabricating semiconductor devices are also provided herein. |
申请公布号 |
US2008315282(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080199237 |
申请日期 |
2008.08.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO EUN-SUK;LEE CHUL |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|