| 摘要 |
The invention relates to technology of growth of monocrystals. A method comprises the loading of charge stated compound of АВinto crucible, placing of disk, chemical-resistant in relation to this compound, with density smaller relative to density of smelt, with high heat conductivity and with possibility of its free moving in crucible during growth, installation of crucible in plant for growth under pressure of inert gas and drawing of crucible with smelt through gradient temperature zone. At that stated disk is placed on bottom of crucible before loading of charge. The invention provides increase recovery of crystals adapted for use at 15-20 %, decrease radial heterogeneity of factor of optical absorption in 2.5-5 times and evaporation of charge at growth in 2-3 times in comparison with prototype. |
