发明名称 OPERATION METHOD OF PROCESSING SYSTEM AND PROCESSING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a an operation method of a processing system and the processing system capable of operating an exhaust unit even when a by-product containing silicon is deposited in the exhaust unit.SOLUTION: The operation method of the processing system includes the steps of: stopping a first exhaust unit from operating, which is connected to a processing unit; heating the stopped first exhaust unit; and resuming the operation of the heated first exhaust unit. The processing unit forms a film which contains silicon using a chlorine-containing gas on a substrate or removes the film containing silicon from the substrate.SELECTED DRAWING: Figure 1
申请公布号 JP2016167513(A) 申请公布日期 2016.09.15
申请号 JP20150046263 申请日期 2015.03.09
申请人 TOSHIBA CORP 发明人 SATO SHINYA
分类号 H01L21/205;C23C16/44;F04C25/02;F04C28/02;F04C28/06;F04C29/04;F04D19/04;H01L21/02;H01L21/3065 主分类号 H01L21/205
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