PROCESSING METHOD FOR SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To process a semiconductor substrate to a desired pattern with high accuracy by etching a mask layer by oxygen plasma before etching after formation of the-mask layer on a semiconductor substrate and before removal of the mask layer after etching of the semiconductor substrate. CONSTITUTION:A mask layer 11 is formed on a semiconductor substrate 1, and a skirt 17 of the mask layer 11 and residue of a material of the mask layer 11 are removed by etching by oxygen plasma. A groove 13 is formed to form a projection part 12 in a semiconductor substrate main body 2 by performing etching by hydrocarbon gas plasma using the mask layer 11 as a mask. Then, etching is performed by oxygen plasma, a layer 18 of generated carbon compound is removed and the mask layer 11 is fused and removed. Thereby, the semiconductor substrate 1 can be processed to a desired pattern with high accuracy without damage.