| 摘要 |
<p>A polarization insensitive optical amplifying apparatus having a semiconductor laser structure, and serving as an amplifier for imparting a gain to input light from outside the apparatus. In the optical amplifying apparatus, a second semiconductor layer (14) is formed on at least a first semiconductor layer (1). The lattice constant of the second semiconductor layer is less than the lattice constant of the first semiconductor layer. The second semiconductor layer undergoes a biaxial tensile stress due to a lattice mismatch between the first and second semiconductor layers, and serves as a well layer of an active layer having a quantum well structure (4). A third semiconductor layer (13a,13b) is also formed on at least the first semiconductor layer. The lattice constant of the third semiconductor layer is less than the lattice constant of the first semiconductor layer. The third semiconductor layer also undergoes a biaxial tensile stress due to a lattice mismatch between the first and third semiconductor layers, and serves as a barrier layer of the active layer having the quantum well structure. <IMAGE></p> |
