Method for fabricating a gap type semiconductor substrate of red light emitting devices

摘要

A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0x1016 atoms/cc but less than 1.0x1017 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B2O3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.