| 摘要 |
PROBLEM TO BE SOLVED: To suppress decrease in film forming speed due to a clogged heater and to form a high-quality film at a high film forming speed. SOLUTION: A CVD device is provided with a reaction case 21, a gas introducing pipe 33 for supplying reaction gas to the reaction case 21, an exhaust pipe 34 for discharging the reaction gas from the reaction case 21, an earth electrode 23 placed in the reaction case 21 on which a substrate 22 to be treated is placed, an electrode 25 for discharge which is opposed to the earth electrode 23 in the reaction case 21, a high-frequency power source 31 for supplying electric power for generating glow discharge to the electrode 25 for discharge, and a heater 26 with mesh for radical heating which is placed in parallel to the electrode 25 for discharge with a space in the reaction case 21. In this case, the gap of the heater 26 for radical heating ranges between including 1 mm and 5 mm. The frequency of the electric power for generating glow discharge ranges between 45 and 200 MHz.
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