发明名称 Capacitance detection type sensor and manufacturing method thereof
摘要 Capacitance sensor electrodes are arranged in a form of matrix on a semiconductor substrate and coated with a cover film. These capacitance sensor electrodes are connected to a drive circuit. ESD electrodes are arranged in the vicinities of corner portions of the capacitance sensor electrodes. Each ESD electrode is composed of a film containing, for example, aluminum excellent in conductivity and a TiN film formed thereon. The ESD electrodes are grounded through the semiconductor substrate. On each ESD electrode, a plurality of fine ESD holes reaching the ESD electrode from a surface of the cover film are formed.
申请公布号 US7364931(B2) 申请公布日期 2008.04.29
申请号 US20050304795 申请日期 2005.12.16
申请人 FUJITSU LIMITED 发明人 ITO MASAKI
分类号 G01B7/28;H01L21/44;A61B5/117;G06K9/00;G06T1/00;H01L21/822;H01L27/04 主分类号 G01B7/28
代理机构 代理人
主权项
地址