| 发明名称 |
CONDUCTIVE BRIDGING MEMORY DEVICE HAVING A CU-TE-(GE/SI) COMPRISING TOP ELECTRODE |
| 摘要 |
A Conductive Bridge Random Access Memory (CBRAM) device is disclosed, comprising an insulating electrolyte element sandwiched between a cation supply electrode and a bottom electrode, whereby the cation supply electrode consists of a CuxZyeTez alloy with Z being Ge or Si and with y>15 at. %. |
| 申请公布号 |
US2016211447(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201614995488 |
申请日期 |
2016.01.14 |
| 申请人 |
IMEC VZW ;Universiteit Gent |
发明人 |
Devulder Wouter;Goux Ludovic;Opsomer Karl |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Conductive Bridge Random Access Memory (CBRAM) device comprising:
an insulating electrolyte element sandwiched between a cation supply metal electrode and a bottom electrode, wherein the cation supply metal electrode comprises an CuxZyTez alloy, with Z being Si or Ge, and wherein 0<x, y, z<100 at. %, whereby y>15 at. %. |
| 地址 |
Leuven BE |
