| 摘要 |
PURPOSE:To enable the formation of a thin film without mixture of impurity except a target material by using an electrostatic lens, thereby emitting an ion beam only on the surface of the target. CONSTITUTION:In an ion beam sputtering apparatus which introduces gas such as Ar to an ion source 1, tripping ions produced in the source into a high vacuum zone 2, emitting the tripped ion beam 3 to a target substance 4 on a target holder 6 placed obliquely with respect to the ion beam 3, sputters its atoms from the substance 4 and adheres the atoms on a substrate 5, an electrostatic lens 7 is provided at a position C between the source 1 and an ion neutralization filament 8. When a voltage is applied to the lens, the diameter of the ion beam is controlled to emit the ion beam only on the target surface. |
