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发明名称
Process for the formation of a monolithic high voltage semiconductor device.
摘要
申请公布号
EP0262723(B1)
申请公布日期
1993.12.15
申请号
EP19870201791
申请日期
1987.09.19
申请人
SGS-THOMSON MICROELECTRONICS S.R.L.
发明人
MUSUMECI, SALVATORE;ZAMBRANO, RAFFAELE
分类号
H01L21/76;H01L21/331;H01L21/74;H01L21/761;H01L21/8222;H01L21/8228;H01L27/06;H01L27/082;H01L29/73;(IPC1-7):H01L21/74;H01L21/82;H01L21/72;H01L29/06
主分类号
H01L21/76
代理机构
代理人
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