| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist developing method and a resist developing equipment which can form a fine resist pattern with high precision, restrain development defect effectively, and obtain high uniformity of development in the surface of a substrate. SOLUTION: While a wafer 1 wherein exposure is finished is rotated, developer is spouted on the vicinity of the wafer 1 center or on the peripheral part, from a developing nozzle 6. In the state that the developer is spouted, the wafer 1 is scanned circumferentially by the nozzle 6, along a specified path starting from the vicinity of the wafer center or the periphery, and the resist is developed. According to the size of the wafer 1, the kind of resist, the form of a resist pattern, the kind of developer, etc., the traveling velocity of the nozzle 6, the number of times of traveling, the traveling direction, the height of the nozzle 6 from the wafer 1, the discharging amount of developer from the nozzle 6, exchange of the nozzle 6, etc., are controlled. |
