| 摘要 |
A method of manufacturing a self-aligned type out-rigger phase shift mask includes the steps of forming light-shielding patterns spaced apart by a predetermined distance from each other on a transparent substrate. A photosensitive organic layer is formed on the light-shielding patterns and the substrate. The photosensitive organic layer is surface-treated with an organic material to form a hard-soluble layer on a surface of the photosensitive organic layer into which the organic material soaks. Back side exposure and development is performed to form a hard-soluble layer/photosensitive organic material stacked pattern having over-hanging parts on upper side edges of the stacked pattern. The substrate is selectively etched by using the hard-soluble layer/photosensitive organic material stacked pattern as a mask to define a first pattern and a second pattern on a surface of the substrate between the light-shielding patterns. Then, the hard-soluble layer/photosensitive organic material stacked pattern is removed. |
