发明名称 SMART MICROSENSOR ARRAYS WITH SILICON-ON-INSULATOR READOUTS FOR DAMAGE CONTROL
摘要 <p>A microsensor (10) for identifying a change in a characteristic of an environment having temperatures of up to approximately five hundred degrees Centrigrade includes a substantially flat insulator layer (26) made of silicon oxide. A base layer (28) made of silicon is integrally attached to one side of the insulator layer (26) and a support layer (24) is integrally attached to the other side of the insulator layer (26). Together the insulator layer (26) and the support layer (24) stabilize the base layer (28) which is only about one thousand angstroms thick. A sensor element (12a) is mounted on the exposed surface of the support layer (24), and opposite the insulator layer (26), to generate a signal in reponse to the change in the environmental characteristic. Additionally, there is an electronic element (14) which is processed into the support layer (24). This electronic element (14) is electrically connected directly with the sensor element (12a) to process the signal and indicate an appropriate response.</p>
申请公布号 WO2000037911(A1) 申请公布日期 2000.06.29
申请号 US1999029568 申请日期 1999.12.13
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