发明名称 |
METHOD OF MAKING THIN FILM TRANSISTOR SUBSTRATE |
摘要 |
PURPOSE: A method of making a thin film transistor substrate is provided to widen an angle of visual field by making an arrangement direction of liquid crystal molecules of each region formed differently. CONSTITUTION: The method of making a thin film transistor substrate is composed of forming a data wiring comprising a data line(51), a source electrode, a drain electrode and a data pad and forming a passivation insulating film(60) covering data lines(51) and a gate insulating film(20). A photoresist film is coated and exposed by a mask(100) so that a photoresist film pattern(80) is formed which is inclined toward an edge from a center of a pixel region. A passivation film pattern(80) is formed by etching the passivation insulating film(60) by use of the photoresist film pattern(80) as a mask.
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申请公布号 |
KR20010009748(A) |
申请公布日期 |
2001.02.05 |
申请号 |
KR19990028288 |
申请日期 |
1999.07.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG, MUN PYO |
分类号 |
G02F1/136;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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