发明名称 APPARATUS AND METHOD FOR CHUCKING/DECHUCKING SEMICONDUCTOR FABRICATING APPARATUS TO MINIMIZE AND CONTROL GENERATION OF DECHUCKING DEFECT
摘要 PURPOSE: An apparatus for chucking/dechucking a semiconductor fabricating apparatus is provided to minimize and control generation of a dechucking defect by detecting a ground voltage grounded to a ground terminal in a dechucking process after a semiconductor etch process is performed and by controlling an increase of a lift pin while using the ground voltage. CONSTITUTION: A substrate(108) is placed in an electrostatic chuck(106) in a plasma reaction process. An electrostatic chuck power supplying unit(112) applies a constant voltage or a reverse voltage to attache/detach the substrate to/from the electrostatic chuck. A lift pin(110) is inserted into the electrostatic chuck in etching the substrate and ascends from the electrostatic chuck while grounded to a ground terminal when the etch process is completed, so that the substrate is separated from the electrostatic chuck. A ground voltage detecting unit detects the ground voltage grounded from the substrate when the lift pin ascends to the substrate contact surface of the electrostatic chuck to contact the substrate, connected between the lift pin and the ground terminal. A control unit stops the lift pin at the substrate contact surface when the ground voltage detected by the ground voltage detecting unit is not lower than a predetermined voltage, and elevates the lift pin to the substrate contact surface or higher when the ground voltage is not higher than the predetermined voltage.
申请公布号 KR20050018063(A) 申请公布日期 2005.02.23
申请号 KR20030055979 申请日期 2003.08.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, KEE WEONE
分类号 H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/68
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