Driver stage for power semiconductor component i.e. insulated gate bipolar transistor, has resistor coupling control device with output to adjust current induced by driver voltage in gate and adjusted to two different resistance values

摘要

The stage (1) has a control device (5) for generating a driver voltage for connecting an insulated gate bipolar transistor (2), and an output (3) for outputting the driver voltage to a gate of the bipolar transistor. An adjustable resistor (7) couples the control device with the output to adjust the current induced by the driver voltage in the gate, and is adjusted to two different resistance values. One of the resistance values limits a rise of a gate collector voltage or a gate drain voltage of the transistor to a maximum permissible voltage variable rate, and the other value has zero ohm. An independent claim is also included for a method for connecting a power semiconductor component.