| 摘要 |
A memory integrated circuit comprises:
a plurality of address pins (755) to receive shared row address signals, shared column address signals, independent column address signals, or combinations thereof;
a column address load strobe pin to receive a column address load strobe signal to selectively receive one or more of the independent column address signals on the plurality of address pins (755);
a register (810) to store a micro-tile enable bit and a first sub-channel select bit;
a first plurality of multiplexers (901A) each having a first select control input coupled together and to the first sub-channel select bit to select one of a plurality of multiplexer (901A) inputs as a respective multiplexer (901A) output, the plurality of multiplexer (901A) inputs coupled to a subset of the plurality of address pins (755) to receive the independent column addresses, the first plurality of multiplexers (901A) to select one or more of the independent column address signals as independent sub-channel column address signals to be provided on the respective multiplexer (901A) outputs in response to the first sub-channel select bit, wherein the first sub-channel select bit is to assign the sub-channels of the memory array; and
a column address decoder (804) coupled to the respective outputs of the first plurality of multiplexers (901A), the column address decoder (804) to selectively access columns of memory cells within a memory array (801) in response to the shared column address signals and the independent sub-channel column address signals in response to the micro-tile enable bit.
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