| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved edge emission type semiconductor laser capable of moderating heat generation by non-emissive re-coupling in a side facet of a semiconductor laser in an active layer. SOLUTION: In this edge emission type semiconductor laser, a second waveguide layer 2 adjoins a second mantle layer 5, and the active layer is not embedded in the second waveguide layer. The second waveguide layer 2 is optically coupled to a first waveguide layer 1 at least in partial regions 10 and 11. In addition, a third mantle layer 6 is arranged on the side of the second waveguide layer 2 opposite to the waveguide layer 1. COPYRIGHT: (C)2009,JPO&INPIT |
